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Dear friends, recently I've hunt up at my work VOR antenna baluns.
Since I am not very much familiar with this kind of RF devices, I don't get some of theirs design features.
Here are theirs schematics, drawn in AWR MWO:
So the question are:
1) Why they are built in such a different way...
Hi there.
I'm curios now with a choice of a pin-diode for a high power switch.
The power conditions are:
Ppeak = 1 kW;
Pcw = 40 W;
tpulse = 4 us;
doble gaussian pulse
Also average power might be decreased down to 10 W, while peak power would be still 2.1 kW (it depends on quantity of...
Thanks!
For insertion loss measurments now I use a resisitive matching network. This method was described in a paper "HOW RF TRANSFORMERS WORK AND HOW THEY ARE MEASURED" by Mini-Circuits engineers. This way shows a good agreement with simulation and with expectations.
Yes, I used to do like this. Yet I suppose that this way gives rather rough and not reliable results, doesn't it?
I mean this is not suitable for a verification of a device, where balun is used.
It is not quiet clear from datasheet, but seems that VSWR is given for unbalanced 50 Ohm input.
I am talking about the VSWR from its balanced outputs. Ports 2 and 3 on the picture attached. Ports was placed according to pin configuration described in s-param file.
I use resistive impedance matching network and then recalculate the resulting impedance to get the "real value" on few frequency points. Not sure this is a correct way - nevertheless the results looks similar to the simulated ones. In my case it is more important, why simulation, where...
Why the VSWR of a balun from its outputs (balanced side) is always about ~2.5:1 or higher?
I simulated and measured a series of baluns (e.g. TC1.5-52 from Minicircuits) and had the VSWR responce as shown at the picture attached.
It is a 1.5:1 balun, the input impedance was 50 Ohm, each of the...
There are two "pro" arguments for using CE circuit:
1) Manufacturer recommended use CE due to the transistor pin configuration. This is actually not very strong argument.
2) CC that I designed seems to be very unstable, it could works fine on a determined frequency, but there appear a lot of...
Dear colleagues,
Recently I design in AWR MWO two types of X-band VCO using BFR840 transistor: with common emitter and common collector.
I always used to thought that CE circuit provides a higher value of output power than other ones. But I see the reverse situation: while CC circuit gives...
The first reason, that comes to mind, is roughness. But there are two opposite points of view on it:
1) It could increase capacitance because of high electric field on the ends of cones forming rough layer
2) It could decrease capacitance since it decreases contact area between electrode and...
Hi!
I have a problem with a fabricated RF MEMS capacitors. Theirs capacitance is much (~3 times) less that a calculated value.
Could anyone please help me to explain this effect?
A capacitor represents a 1-port CPW-line, which ends with a region of a deposited dielectric layer that connects...
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