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There is no reason to cover body contacts with Oxide layers.
As already stated, the layer affected by Thin/Med/Thick layers is Poly only.
If you have dataprep manual you can easily double check.
I'm assuming you're using Cadence Virtuoso Layout Editor.
1) Select all the object + eventually the unwanted layers.
2) Go to LSW window and click on "NS" button (all layers are now set to "Not Selectable").
3) Go to the unwanted layers and RIGHT click on them (make all of them selectable).
4)...
lvs rule
In general it is better to not touch any DRC/LVS deck.
You can simply waive the error if you're really sure that it is a fake error.
The DRC/LVS deck are text files. They can be plain text or crypted. In the second case you do not have any chance to modify them unless you have the...
after effects of fingering
Moreover, the silicide formation on the 2 configurations is different, resulting on 2 different resintance on Source and Drain terminals.
cmos inverter+overshoot
Yes, it is.
The overshoot and undershoot are mainly due to Cgd (capacitance between gate and drain) of the 2 transistors.
At high frequency, this capacitance propagates the input signal directly to the output node before the inverter can reach the stability.
how much does a wafer cost
Costs vary from fab to fab and they depends mainly on the technology node.
The more aggressive the technology, the more expensive the wafer.
In reality, the big cost is related to mask building. So, the $/wafer is depending on the total number of wafer you need.
Re: The ndio in N-well tech
N-well technology means that you're allowed to draw N-Wells only, not P-Wells.
So, everything is not N-Well is P-Well (i.e. P substrate).
N+&PW ndio(de) is a vertical diode. The anode is the N-Active area, the catode is the substrate (always grounded).
Main pro: more area available for design.
Main con: channel passivation is not properly performed, so you'll have a device performance degradation depending on transistor size and type.
Re: general question
Actually, it is the minimum transistor channel length you can draw in that technology.
So, it is referring to polysilicon width over active, not to other geometries.
Re: Role of Test Chips
mdcui answer is correct.
However, some test chips are also designed fitting the scribe lines between product chips.
In this way you can monitor during the in-line production any tool shifting from the specs and you can also predict the right time to stop the chain and...
IMHO, bias is part of the design. You need to take in account it when you design a circuit in order to properly set transistors in the correct region.
Offset is something unwanted and usually not predictable (due to mismatch, gradients, process variations) which may affect circuit behavior.
As you said, it is depending on process and current value.
I would say that with 2ua you'll never have any kind of problem even with minimum metal width.
A dummy rule is 1mA every um of metal width.
I'm talking about M1. For metal above M1 is even better.
Re: Why Dummy for MOS
The long edge of the poly gate is much more sensitive to process fluctuations than the short edge of the transistor channel (by costruction).
If you have high CD line variation (the long poly line has irregular edges), the effective length of the transistor is not precise...
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