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Hi,
How do we find µn * Cox for nmos transistor by hand calculation and by operating point analysis in Cadence(Print DC operating points)?
With Diode connected mosfet and drain connected to a current source, I get µn * Cox = 223u
With gate and drain connected to a voltage source, I get µn *...
Hi,
While designing a current mirror, many times we play around with "W" but not "L". eg: if I need a current of 2I, then I increase W --> 2W, and not L--> L/2. One reason may be due to channel length modulation. Is there any other reason in doing so?
Thanks!
Hi,
For biasing a MOSFET with Drain and Gate connected through a resistor need a big resistor. Why we need to use big resistor? Will shorting Gate and Drain work for Biasing (still the current in feedback path is 0)?
Thanks!
Hi,
It is learned that threshold voltage and mobility decrease with increase in temperature. How can we intuitively justify the statement?
Thanks,
Anjan
What I have learnt so far is ID(Drain current) is a function of VGS(when the MOSFET is operating in active region). Is there any way to maintain ID constant by increasing VGS?
Thanks
Ajay,
Thank you very much..... Do you have any idea about the companies doing analog design work in India?????? If possible send me your email id?????
Thank you
Hi friends,
Can i know the scope of VLSI and analog design in next 5 years?????
Also can i go to USA with 2 years of experince behind me in VLSI field????
And for post graduate program VLSI is a good choice or not(masters in US)?????
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