Zero Vt devices and channel doping in FDSOI

[Tommy95]

Hi all,
I am currently working in GF22fdx technology. I am working on device simulation and layout. I want to create devices (22nm gate length) that are always conducting current( like zero vt fet) independent of gate voltage. I tried using SLVT and ELVTWFP^2 type pmos devices and tried back biasing to its maximum voltage of +/-2V. I cannot make the threshold to be 0V. Is there any other way to create those devices? I am trying an alternative to dope the channel same as source and drain which would provide continuous conduction. Is it possible in fdsoi to dope the channel? Is it possible to use XW and LW layers or they are just for PCI images? Please let me know. It would be helpful. Thanks

Regards,
Tommy95

 

[Dominik Przyborowski]

Is it possible in fdsoi to dope the channel?

Yes it is. There are a flavors with additional doping for high threshold.

Is it possible to use XW and LW layers or they are just for PCI images?

This is a question for foundry.

 

[Tommy95]

Hello Dominik,
Thank you for your kind reply. You mentioned doping the channel. Are there any special mask layers that could be used in layout? I am using gf22fdx technology from global foundries. Because I want to simulate those devices.