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The basic structure of MOS (Metal-Oxide-Semiconductor) forms a capacitor.
To explain qualitatively, consider that a current is flowing in the semiconductor. Now we have the scenario that there is an insulating medium (oxide layer) in between two conducting media (metal is the other). This is similar to a parallel plate capacitor.
In MOSFETs, the current in the semiconductor is established when a channel is present below the gate region. In this scenario, the capacitance is the maximum and this can be utilized effectively.
For a detailed quantitative description and a field theory perspective analysis, refer to the book "The MOS Transistor" by Yannis Tsividis..
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