Terminator3
Advanced Member level 3
I just found an interesting image https://leleivre.com/images/via_inductance.png
It shows that VIAS with bigger radius have lower inductance.
What if we make really big "via", a metallized hole of diameter around 3mm. Low inductance expected? If we connect RF component to the edge of such metallized hole, will it provide good grounding with low inductance? For example FET with ground source.
Although from this paper: https://www.montana.edu/blameres/vitae/publications/a_thesis/thesis_002_msee.pdf
not only inductance becomes smaller, but capacitance raises.
Any benefits of using such big metallized holes?
It shows that VIAS with bigger radius have lower inductance.
What if we make really big "via", a metallized hole of diameter around 3mm. Low inductance expected? If we connect RF component to the edge of such metallized hole, will it provide good grounding with low inductance? For example FET with ground source.
Although from this paper: https://www.montana.edu/blameres/vitae/publications/a_thesis/thesis_002_msee.pdf
not only inductance becomes smaller, but capacitance raises.
Any benefits of using such big metallized holes?