stanislavb
Full Member level 2
Hi,
I understand you are using n-channel MOSFET. In original schematics gate voltage range is ~11V - 12V dependng from optocoupler. However Vgs(th) of the FET is +3V. Therefore the MOSFET's working point located in saturation area every time. From my opinion you'd better to use p-channel MOSFET instead or change gate voltage range. In next revision of the circuit you are using PNP and NPN pair to manage MOSFET gate voltage. This additional circuit capable switch MOSFET on/off and as result solve the problem.
Added after 3 minutes:
About diode I agree you have to use fast diode to depress positive spike and preserve MOSFET from damage
Added after 1 minutes:
It's not enough technological diode inside MOSFET
I understand you are using n-channel MOSFET. In original schematics gate voltage range is ~11V - 12V dependng from optocoupler. However Vgs(th) of the FET is +3V. Therefore the MOSFET's working point located in saturation area every time. From my opinion you'd better to use p-channel MOSFET instead or change gate voltage range. In next revision of the circuit you are using PNP and NPN pair to manage MOSFET gate voltage. This additional circuit capable switch MOSFET on/off and as result solve the problem.
Added after 3 minutes:
About diode I agree you have to use fast diode to depress positive spike and preserve MOSFET from damage
Added after 1 minutes:
It's not enough technological diode inside MOSFET