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P-Well Layout in TSMC 65nm

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Rams94

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I want to draw a P well like the figure.

1663095813672.png


I have three layouts that come to mind, but I am confused about which one is right because of the PW layer in TSMC 65nm.

They are the three layouts:

1663095918160.png


(a) Draw the DNW and draw the NW with an empty center(hole).
(b) After drawing as in (a), draw a PW layer in the center hole.
(c) Draw DNW, draw NW without a hole, and draw PW in the center.

Which one do you think is right?
 

DNW is like a buried layer and need NW to provide potential. So you should draw DNW without a hole then draw NW like a guard ring and connect to the highest potential. As for PW, I never used TSMC process before, but PW should be operated layer generally means you need not to draw it manually.
 
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