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In 65nm process, some of the features will be:
Large variation in the gds across process corners (short channel effect), large vt variation due to DIBL, large leakage currents due to low vt of the devices, lower Vds and gate oxide breakdown voltages, better Mu * cox value and hence better drive current.
Regards,
Jitendra.
I have seen ur points , please provide some documents by that i can get some more knowlegde about this technology . If u can send document regarding both design and Layout , it will be very good .
Please ask the fab for the documents for which you are working.It does not make sense to look at some other fab's 65nm proces parameters, and also they are confidential docs.Nobody will provide you them.
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