Pat_Mustard
Junior Member level 3
I'm looking for a bit of depth to my understanding of matching techniques.
As I understand it to achieve a well matched mirror it is important to match the direction of current flow in the reference device and the mirrored device, i.e. if you have two transistors sinking 1uA drain current option 1 below would be better as current would flow left to right in both the reference and mirror
Device 1 Device 2
1. Drain Gate Source Drain Gate Source
2. Drain Gate Source Source Gate Drain
Option 2 allows us to share the sources however current would flow from left to right in the reference, and right to left in the mirror. I understood that as the silicon is crystaline direction of current flow is important. I thought it was due to impedance in the active area but don't understand how the impedance can be different when the current is taking the essentially the same path, albeit in another direction.
Can anyone explain the mechanism that means current direction should be uniform in current mirrors? Many thanks
As I understand it to achieve a well matched mirror it is important to match the direction of current flow in the reference device and the mirrored device, i.e. if you have two transistors sinking 1uA drain current option 1 below would be better as current would flow left to right in both the reference and mirror
Device 1 Device 2
1. Drain Gate Source Drain Gate Source
2. Drain Gate Source Source Gate Drain
Option 2 allows us to share the sources however current would flow from left to right in the reference, and right to left in the mirror. I understood that as the silicon is crystaline direction of current flow is important. I thought it was due to impedance in the active area but don't understand how the impedance can be different when the current is taking the essentially the same path, albeit in another direction.
Can anyone explain the mechanism that means current direction should be uniform in current mirrors? Many thanks
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