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N buried layer is more likely the drain node, if current is quasi-vertical
(as a good high density DMOS would be). Tying it to the highest
supply would probably be "interesting" (for as long as it survives).
hi, to edwintsu,
you said:Based on breakdown voltage of lateral junction between Isolation to Drain, connect to to Drain maybe more safe.
here, who construct lateral junction? does N+(drain), PWELL(pbody or pbase), and HVNWELL or nbl(isolated ring) construct parasitic npn? If that is right, I mean we connect nbl to drain, then the parasitic npn will be diode(drain to pwell), here the parasitc diode breakdown voltage is higher than parasitic npn junction, true or fause?
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