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Design of microstrip lowpass filter

okik

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So i have given circuit (link below) and my question is:
Is possible to somehow transform that LC part (L1-Cp1) of that given circuit into microstrip?

1697630193686.png
 
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Each LC in || has a magnitude of impedance that is equal but opposite phase at the resonant frequency. Thus the length of the 1/4 wavelength controls frequency and the width/depth ratio on gnd. plane controls impedance.

This is for HPF but shows all the variables for different common filters too.
 
Each LC in || has a magnitude of impedance that is equal but opposite phase at the resonant frequency. Thus the length of the 1/4 wavelength controls frequency and the width/depth ratio on gnd. plane controls impedance.

This is for HPF but shows all the variables for different common filters too.
Is this only way how to do it? I mean, i knew values of L=20nH, Cp=1.9pF, Cs=1.2pF, Z=75 ohm - from that can be calculated impedance and not from table as was shown in the video.
 
Do you have a specific tolerance or transfer function for this "almost" Inverse Chebychev 5-pole 1 GHz LPF?

The microstrip will be recursive, unlike fixed lumped elements so is not a good fit in the bandstop region.
 
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you are using the WRONG TOPOLOGY for a microstrip Lowpass Filter!

View attachment 186401
THIS will be much easier way to realize an elliptical function lowpass filter
Every lumped strip has an impedance of sqrt(L/C) with resistance. Every shunt capacitance has inductance.

So eventually it can start like your schematic with stripline and grow in complexity depending on your L/C ratios and stripline impedance.

For example this;

1700849300421.png
 
i try to make project in CST from given example, but my simulated S-parameters dont equal expected S-parameters and everything looks right(scheme, lengths/widths of microstrip), so what could be wrong(i think potential problem could be somewhere in CST)?

1701120994784.png

1701120873440.png
 

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I don't know what substrate did you use in the simulation shown in #9 but I was able to replicate somehow the S11 and S21 plot (a) using Alumina Dk=9.8 with thickness 0.8mm.
 
i try to make project in CST from given example, but my simulated S-parameters dont equal expected S-parameters and everything looks right(scheme, lengths/widths of microstrip), so what could be wrong(i think potential problem could be somewhere in CST)?
Something is totally wrong with your CST model. The filter must have a through path at DC (0dB insertion loss), but your CST model blocks DC. There might be some gap in the layout.

Edit: Looking at your model screenshot I think the open stub is shorted to the simulation boundary, see arrow.

short.png
 
This is how someone like me would approach your design which I know nothing about your "stepped impedance" filter.
It may have something to do with the assumptions. What happens if the stubs are put on alternate sides?
if i put stubs on alternate side that result is still same,
dont know what else should i change
 
Something is totally wrong with your CST model. The filter must have a through path at DC (0dB insertion loss), but your CST model blocks DC. There might be some gap in the layout.

Edit: Looking at your model screenshot I think the open stub is shorted to the simulation boundary, see arrow.

View attachment 186520
how to solve it?
maybe larger substrate is needed to avoid short circuit?
EDIT: open stub shorted to the simulation boundary was the problem as you mention, so then i made substrate larger(to create gap above stub) and it works!
thank you so much for advice
 
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Hello everyone, you help me a lot before and I have request for a help again.
I successfully repeated example in chapter 5.1.3 from this book: HONG, Jia-Shen G.; LANCASTER, Michael J. Microstrip filters for RF/microwave applications. You can see that example above in post #9. So I use this example as guide in my own design of microstrip filter. Everything seems to be fine, but one problem occurs. That is what I want to ask you - how to compensate the unwanted reactance and susceptance presented at T-junction? I mean that relation (5.11) is used in book, but i don't understand how to use it correctly to get correct S-parameter results.
Thanks in advance for any help.
 
i try to make project in CST from given example, but my simulated S-parameters dont equal expected S-parameters and everything looks right(scheme, lengths/widths of microstrip), so what could be wrong(i think potential problem could be somewhere in CST)?

View attachment 186510
View attachment 186509
I stay away from such structures, since the aspect ratio is so far off. The poor electrons do not now if it is a transmission line, or a rectangular resonator! And in any event, the fringing capacitances would be a huge factor!

1704460810593.png


It certainly can not be analyzed as a simple Microstrip transmission line open circuited end!

As an academic exercise, you CAN make structures like this, but require a full emag simulation to figure out how they will react. and they probably then show unwanted higher mode artifacts that make the stop band performance spotty
 

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