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In a FET, BJT or diode the reach-through is onset of early breakdown. But I have never noticed a more general description (though any 3-region device could be considered a transistor of some, possibly degenerate sort)..A difference might be that transistors / diodes tend to be biased with different terminal voltages while (say) two closely spaced Newell regions might have zero potential difference and then zero outcome.
When two depletion regions (n-p and p-n) merge, you do not have a quasi-neutral p region (that has a high potential barrier for electrons), it becomes fully depleted. The barrier becomes dramatically lower, which may increase exponentially the leakage (current) between the n regions. This condition is often called punch-through.
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