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22nm length CMOS technolgy

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ntn45ec

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What should be power supply value, gm and also of the WIDTH for 22nm technology????
 

I think you should check 22nm CMOS tech library file, you'll find some basic information about this tech (22nm) on it.
 

Power supply for digital logic is around 1V, width of the device will vary 120nm to 1u depending upon the foundary. the thick oxide devices will be the same as 45nm. But these are general values it will change depending on foundary

What should be power supply value, gm and also of the WIDTH for 22nm technology????
 

Power supply for digital logic is around 1V, width of the device will vary 120nm to 1u depending upon the foundary. the thick oxide devices will be the same as 45nm. But these are general values it will change depending on foundary

Thanks sir for giving me idea but I want the proper value of vdd and width value and how it changes????
 

sir artmalik,

what shold be the mobility value for 22nm????
 

Sir,

I have that file already but able yo find the noise of given technology what should be the coding for SPICE???
 

... able yo find the noise of given technology what should be the coding for SPICE???

So why don't you ask earlier for what you really want? See the BSIM parameter definitions for noise!
 

I got width 2407.68nm for length 22nm is that suitable or I have to change and if yes then what sould be it around??
 

Ok I am not sure why you are interested in mobility. If you are doing digital design what matters is Idon/Ioff as basic parameter along with the gate cap of the device both of which you should be able to simulate. If you are doing analog design then channel should be more than 22nm (even if it is going to be fabricated in 22nm technology). the main parameters will Gm of the device and Rds of the device.
For what application you got this width and you can of course round it up and use multiple fingers to achieve this width.
 

Respected sir,

I want to design up converter usind analog vlsi for 24ghz frequency and want to get parametes values such as the w/l, power consumption, gain and noise figure such like that and for that i have ti define first w/l and then i will able to find Ids and using that i will find all other parameters but want what should be w/l for 22nm? because that is confusion in my mind and then after i will arrange most of those parameters... and if you have any idea related to those parameters then tell me..
 

Choice of Length it a tricky thing in Analog design. As such the lengths of the devices are quantized ie you can use a certain set of device lengths only. Find the Frequency response of the fets for different channel length and width. You can look at this eda board entry
https://www.edaboard.com/threads/131619/
You should choose the one with the highest Ft. The problem I see is that 24GHz is very high for mosfets to work on. You are in microwave engg domain. I think the problem is not solvable in the mosfet traditional way.

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Choice of Length it a tricky thing in Analog design. As such the lengths of the devices are quantized ie you can use a certain set of device lengths only. Find the Frequency response of the fets for different channel length and width. You can look at this eda board entry
https://www.edaboard.com/threads/131619/
You should choose the one with the highest Ft. The problem I see is that 24GHz is very high for mosfets to work on. You are in microwave engg domain. I think the problem is not solvable in the mosfet traditional way.
 
Now i come to know ablout to W/l. Next problem is that how to find the NF, Gain, S11 and 1db compression point at 2.45 Ghz?
 

how to find the NF, Gain, S11 and 1db compression point at 2.45 Ghz?

I think you can't expect from forum members to educate you in analog RF circuit design and analysis. This is taught in universities, their internet presentations, and appropriate textbooks. Try and study such sources!
 

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