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Reducing drain induced barrier lowering

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rogger123

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drain induced barrier lowering

Hi,
For short channel devices to reduce the effect of drain induced barrier lowering we genrally increase the substrate doping concentration so that we inturn reduce the (drain-sub) junction depth(does junction depth mean the drain substrate depletion region which forms).
Can someone please tell me how with increase in dopping conc of the substrate the junction depth decreases?
Does this apply for any junction between p-type and n-type?(junction depth decreases with increase in dopping conc)
 

hi,
is there any one who can help me with this... i don;t understand how increasing doping conc decreases junction depth.....can any kind soul please explain
 

increase in doping concentrations reduces the junction thickness.it happens because the charge density in the depleted region now becomes very high thereby
increasing the electric field and even a small width of depletion region leads to a field which stops further depletion of carriers.yes this apllies to junction between p and n type. besides incresing substrate doping there are other methods by which DIBL can be reduced namely gate engineering and material engineering.if u want
i can upload ieee papers related to gate material engineering
 

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