The spice model of the1N5806 diode from MICROSEMI

Hi,
Anybody could send me the spice model of the diode 1N5806 from MICROSEMI ?

I don't find it.

:|

1n5806 spice

*
* MEASURED TRR = 36.8NS, SIMULATED TRR = 27.00NS.
*
* TEMP: 125
.MODEL D1N5806/125C D (
+ IS = 1.82094E-8
+ RS = 0.1187774
+ N = 1.6444874
+ TT = 2.96E-8
+ CJO = 3.15091E-11
+ VJ = 0.4
+ M = 0.2078398
+ EG = 1.11
+ XTI = 3
+ KF = 0
+ AF = 1
+ FC = 0.9
+ BV = 1E5
+ IBV = 1E-10
+ )
*$
*
*
* GENERIC FUNCTIONAL EQUIVALENT = 1N5806
* MANUFACTURER = MICROSEMI
* TYPE: DIODE
* SUBTYPE: RECTIFIER_FAST_RECOV
* THIS FILE CONTAINS 3 PARAMETER SETS FOR NON-IRRADIATED DEVICES AT
* VARYING TEMPERATURES OF THE 1N5806.
* PARAMETER MODELS EXTRACTED FROM MEASURED DATA.
*** CAUTION: USE ONLY AT TEMPERATURE SPECIFIED. ANY DEVIATION FROM THIS
* TEMPERATURE WILL PRODUCE INCORRECT RESULTS.
*
*** CAUTION: THE MEASURED TRR AND THE PSPICE CIRCUIT SIMULATED TRR ARE
* DIFFERENT.
* THIS COULD POTENTIALLY LEAD TO ERRORS IN CIRCUIT SIMULATIONS
* IF USED AS A RECTIFIER OR SWITCHING DIODE.
*
* BV, IBV, XTI, EG HAVE NOT BEEN EXTRACTED AND ARE SET TO DEFAULT VALUES.
*
* MEASURED TRR = 26.08NS, SIMULATED TRR = 15.09NS.
* RAD: PRERAD
* TEMP: 27
.MODEL D1N5806/27C D (
+ IS = 1.82777E-8
+ RS = 0.1367235
+ N = 1.6126814
+ TT = 1.343E-8
+ CJO = 3.21228E-11
+ VJ = 0.3
+ M = 0.2
+ EG = 1.11
+ XTI = 3
+ KF = 0
+ AF = 1
+ FC = 0.5
+ BV = 1E5
+ IBV = 1E-10
+ )
*$
*
*
* GENERIC FUNCTIONAL EQUIVALENT = 1N5806
* MANUFACTURERS PART NO. = 1N5806
* MANUFACTURER = MICROSEMI
* TYPE: DIODE
* SUBTYPE: RECTIFIER_FAST_RECOV
* THIS FILE CONTAINS 3 PARAMETER SETS AT VARIOUS POST NUETRON RADIATION
* LEVELS OF THE 1N5806.
* PARAMETER MODELS EXTRACTED FROM MEASURED DATA.
*** CAUTION: USE ONLY AT TEMPERATURE SPECIFIED. ANY DEVIATION FROM THIS
* TEMPERATURE WILL PRODUCE INCORRECT RESULTS.
*
*** CAUTION: THE MEASURED TRR AND THE PSPICE CKT. SIMULATED TRR ARE DIFFERENT
* THIS COULD POTENTIALLY LEAD TO ERRORS IN CKT. SIMULATIONS IF USED
* AS A RECTIFIER OR SWITCHING DIODE
*
* BV, IBV, XTI, EG HAVE NOT BEEN EXTRACTED AND ARE SET TO DEFAULT VALUES.
* MEASURED TRR = 17.7NS, SIMULATED TRR = 17.2NS.
*
* RAD: 5E12
* TYPE: NEUTRON
* TEMP 27
*
.MODEL D1N5806/27C/RAD1 D (
+ IS = 3.51316E-8
+ RS = 0.120717
+ N = 1.663007
+ TT = 1.85E-8
+ CJO = 2.7476E-11
+ VJ = 0.4
+ M = 0.204799
+ EG = 1.11
+ XTI = 3
+ KF = 0
+ AF = 1
+ FC = 0.8991
+ BV = 213.5
+ IBV = 5E-6
+ )
*$
*
*
* MEASURED TRR = 17.68NS, SIMULATED TRR = 17.97NS.
*
* RAD: 2E13
* TYPE: NEUTRON
* TEMP: 27
*
*
.MODEL D1N5806/27C/RAD2 D (
+ IS = 2.76017E-8
+ RS = 0.113459
+ N = 1.645347
+ TT = 1.9E-8
+ CJO = 3.25853E-11
+ VJ = 0.4359477
+ M = 0.233045
+ EG = 1.11
+ XTI = 3
+ KF = 0
+ AF = 1
+ FC = 0.5
+ BV = 1E5
+ IBV = 1E-3
+ )
*$
*
*
* MEASURED TRR = 11.7NS, SIMULATED TRR = 11.8NS.
*
* RAD: 2.73E14
* TYPE: NEUTRON
* TEMP: 27
*
*
.MODEL D1N5806/27C/RAD3 D (
+ IS = 5.69489E-8
+ RS = 0.1455731
+ N = 1.709307
+ TT = 9.3E-9
+ CJO = 5.31594E-11
+ VJ = 0.4
+ M = 0.4023053
+ EG = 1.11
+ XTI = 3
+ KF = 0
+ AF = 1
+ FC = 0.8991
+ BV = 1E5
+ IBV = 1E-3
+ )
*$
*
*
* MEASURED TRR = 13.14NS, SIMULATED TRR = 10.17NS.
*
* TEMP: -55
.MODEL D1N5806/-55C D (
+ IS = 5.34578E-8
+ RS = 0.0640264
+ N = 1.7823373
+ TT = 7.65E-9
+ CJO = 3.21228E-11
+ VJ = 0.3
+ M = 0.2
+ EG = 1.11
+ XTI = 3
+ KF = 0
+ AF = 1
+ FC = 0.5
+ BV = 1E5
+ IBV = 1E-10
+ )
*$

rectifier spice n rs cjo bv ibv tt

dear colleagues,

i have tried to spice model given below in ADS so the conversion in schematics works and i have gotten the schematic circuit but i thing that it is not completed since i did not have ports !!! could you verify it pls ??

++++++++++
define NE3514S02_v127 ( D G S )
parameters Noise=
"EEHEMTM1":NE3514S02_v127 _net125 _net127 _net126 Ugw=160 um N=1 Noise=yes _M=1
model EEHEMTM1 EE_HEMT1 Vto=-990.9 mV Gamma=39.57m Vgo=-346.6 mV Vdelt=0 Vch=593.2 mV Gmmax=84.53 mH \
Vdso=2 Vsat=711.5 mV Kapa=124.6 mS Peff=1.495 Vtso=-10 Is=28.39 pA N=1.633 Ris=5.777 \
Rid=1 mOhm Tau=2.861 psec Cdso=140.4 fF Rdb=1e9 Cbs=160 fF Vtoac=-1.005 Gammaac=42.32m \
Vdeltac=0 Gmmaxac=79m Kapaac=53.82 mS Peffac=14.47 Vtsoac=-10 Gdbm=20 uF Kdb=33.33 \
Vdsm=100 C11o=290 fF C11th=55.18 fF Vinfl=-1.058 Deltgs=2.939 Deltds=415.2 mV Lambda=50.75m \
C12sat=30.26 fF Cgdsat=12.72 fF Kbk=0 Vbr=15 Nbr=2 Idsoc=0.1 Rd=947.1 mOhm Rs=862.9 mOhm Rg=1.417 \
Ugw=160 um Ngf=1 Vco=-382.6 mV Vba=1 Vbc=301 mV Mu=1.836m Deltgm=354.5m Deltgmac=178.6m \
Alpha=300 mV Tnom=25 Rgtc=0 Rdtc=0 Rstc=0 Vtotc=0 Gmmaxtc=0 Gammatc=0 Vinfltc=0 Vtoactc=0 \
Gmmaxactc=0 Gammaactc=0 Xti=3 Kmod=1 Kver=1
L:Ld2 _net120 D L=7.1 pH Noise=yes
C:cds1 S D C=4.2 fF
C:cds S _net120 C=82.8 fF
L:Lg1 _net101 G L=1.98 pH Noise=yes
C:cgs S _net101 C=78.7 fF
C:cgs1 S G C=6.5 fF
C:cgd _net101 _net120 C=11.63 fF
L:Ls _net126 S L=100.3 pH Noise=yes
L:Ld _net125 _net120 L=561.6 pH Noise=yes
L:Lg _net127 _net101 L=583.5 pH Noise=yes
end NE3514S02_v127
++++++

Many thanks in advance,

N

diode switching characteristics trr spice

nassim1, find here a link showing spice file elements that ADS is unable to translate :

http://edocs.soco.agilent.com/display/ads2008U2/Zxxxxxxx

What is the returned message after importing?

tt 7.65

jayce, thank you for information..

No returning message, the conversion in schematic is okay but i think is not completed. The conversion file it 's not for me, one of author tlod me to try that spice model.

could you tried it in your ADS? if yes, normally tou will have a schematic. i want just to verify it if it's full or no since no ports connexion were availables..

microsemi spice model

it doesn t work. Try to define your JFET model using ADS MODEL JFET component, and you fill listed parameters

microsemi pspice model

How can we use the named spice model in the JFETM_model ? it is not the same...

Many parameters have to be added in the JFETM_model which can not be use the given parameters...

is there another way ?