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I read in article that
"At short channel lengths the halo doping of the source overlaps that of the drain, increasing the average channel doping concentration, and thus increasing the threshold voltage. This increased threshold voltage requires a larger gate voltage for channel inversion...
I read that in an n-mosfet, when drain voltage is increased above threshold (in saturation mode) the inversion channel between the source and drain is pinched-off near the drain region. so the channel length decreases and so its resistance. so larger current flows through the channel.
My doubt...
dear LVW,
can i interpret your answer like this?
In a forward biased pn diode, the depletion width is low and current(due to majority carriers) flows from p to n. when it is suddenly reverse biased, current(due to majority carriers) of same magnitude flows in the reverse direction for a short...
what happens exactly in a p-n diode during reverse recovery time? can anyone explain me in terms of minority and majority charge carriers? thanks in advance
Is the physical dimensions of a transistor used in the fabrication of gates, related with propagation delay of that gate?
If so, please explain me how....
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