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For A non-uniformly (exponentially) doped semiconductor.
The left side is doped with 1E18, the right side is doped with 1E15.
Will the carrier concentration n(x) profile change or will it keep the same as the doping profile Nd(x)?
Put it in another way, is it the equilibrium condition at the...
I have the simulation setup as below.
A source of data generator with source impedance 35 Ohm. DataRate 5 GHz with rise and fall time specified as below.
The characteristic impedance of the line is 60 in this setup which matches the 60 Ohm load impedance.
The result voltage at node "V" is...
Can you explain what causes the below? because I only know that impedance mismatch causes reflection! what is the mechanism of it? Thank You!
"There is always a reflection. The line is not settled until
2x "time of flight" when the wavefront returns to the source."
I have a circuit as below.
It consists of a data generator source with source impedance=35 Ohm. Data generated is square wave with certain rise and fall time defined in the schematic.
A transmission line has all the parameters adjusted to have the characteristic impedance of 60 Ohm at...
The transmission used here has characteristic impedance of 60Ohm.
I am using a repeating voltage pulse to get the information of the characteristic impedance of the transmission line.
When the pulse drops to 0.3V or goes back to 1V, Initially the voltage at 'node' changes by 0.7*60/(35+60) =...
Thank you for great and explain. I totally get your concept!
but Can you explain a little more why the original voltage change decay to 26% after each round trip?
Initially the voltage at node get reflected and remain 60/(35+60) =63%
but why it decay to 26% after a round trip? I dont get it how...
The transmission line has characteristic impedance of 60 Ohm.
How to explain that the voltage at 'node' oscillate between 0.558V(1-0.7*(60/95)) and 1.442V(1+0.7*(60/95)) ?
I only know that in stable situation it should be 1V, but what it is confusing is during the transition of the pulse.
The transmission used here has characteristic impedance of 60Ohm at the voltage pulse Tr=0.1 nsec
I am using a repeating voltage pulse to get the information of the characteristic impedance of the transmission line.
When the pulse drops to 0.3V, the node drops to 0.558V because at this short...
I found that an easy way to get the information of a characteristic impedance of a transmission line is to use a voltage pulse.
As below, the pulse varies from 1V to 0.3V. When the pulse drops from 1V to 0.3V, the voltage at 'node' drops to 0.558V before going back to 1V.
Interestingly, the...
I made transient simulations between on die termination (termination is after the wire bond) VS on board termination (termination is before the wire bond).
The result shows that the termination after the wire bond performs better with less ringing.
Does anyone know how to explain this...
I have a transmission line with characteristic impedance of 75Oohm.
I model it with both TLIN (electrical) and MSUB (physical) model.
using a 5GHZ data generator to check the signal quality. I found that the result with TLIN model is ok. But the result with MSUB model is bad, still got some...
I have a pulse signal that is very short (around a pico second)
How do I extend it to like a 10n sec?
using either digital or analog circuit components.
I have a pulse of 10 nesc wide. (low 0V, high 1V)
How do I build a circuit that take this 10 nsec pulse and output a pulse much smaller (<1 nsec)?
The rise point of the 10 nsec pulse and the <1 nsec pulse should be almost the same (<1 nsec difference)
any ideas?
I am doing transient analysis. I need to change the temperature during my transient analysis.
I use the Temp under 'OPTIONS' and use pwl function to change its value.
But during simulation it gave me errors. Anyone plz help me how to solve this?
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