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Recent content by dipak.rf

  1. D

    diff pair and current mirror matching

    ya you can do as suggested by Erikl, also you can use guradring surrounded to these five matching devices as required
  2. D

    Do I need dummy resistor when I draw well resistor?

    I think it is good to put a dummy resistor if its an array of resistor like two diamentional or you can put a well ring because these resistor may produce a high stress region
  3. D

    regarding bulk connection...

    if you have any matching or noise constraints then use guardring or else you can use substrate contacts wherever possible. Put as maximum as you can in your layout
  4. D

    Why is shielding done only with power and ground?

    Re: sheilding hey, Do you mean why sheilding is tie or connected to POWER or GND?
  5. D

    What's the correct way of connecting gates and drain/source in multiple MOS layout?

    Re: Multiple MOS layout Obviously in parallel, drain and source are interchangable. it seems you are new to IC layout, Not to worry i would suggest you to first go through the basic IC layout books or tutorial and start doing it.........
  6. D

    How should I connect substrate of 1.2V and 3.3V?

    For NMOS dont see any problem if you connect both the ground to common substrate of 1.2V and 3.3V devices. For PMOS anyway you are connecting both the NWELLs at different potential For ESD you should go by recommanded structure by foundry itself
  7. D

    what's common centroid?

    In short Common centroid means if you see from the centre of matching geometry all devices should have same environment from all axis, which is commonly use to reduce the effect of linear process gradient or stress induced mismatch Ya Alan Hasting is very gud book to refer, see on page no...
  8. D

    regarding layout in cadence virtuoso

    Ya i agree; you can do this if you have more spacing or not sharing NMOS in one matching geometry. for each NMOS to take M1-psub which connects to VSS
  9. D

    regarding layout in cadence virtuoso

    It doesnt matter if you surround ur NMOS full with guardring and connect to VSS, its the error looking for two PWELL contacts atleast 20um space each other, it means you have to keep PWELL contacts or guardring minimum 20 um in ur case space between each not more than that (obviously it connect...
  10. D

    layout of a bandgap - detailed description needed

    hey, As per your floor plan in attachment, we cant comment more abt it unless we see the schematic, it is depends upon the ckt topology you used. Related to BGR layout, important points are (An extension to pbobde's points) 1. Layout for BJT ratio x:1 is very important (Put single transistor...
  11. D

    Problem in RFCMOS Layout ?

    I will suggest you to do EM simulation of your layout or parasitic extraction and find out the minimum acceptable value of spacing between two inductor to avoid mutual inductance. Positive or Negative either type of mutual inductance will affect your LNA gain and other parameters See what other...
  12. D

    find a single via by a skill script

    Re: find a single via Thanks erikl, but i need some clarrification, are u talking about to modify DRC rule set file by this method, if it is Can you guide me, i mean how to include this with proper syntax, i will try it at my end waiting for your reply Dipak

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