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Re:NPN/ Triple guard ring for ESD
I meaned n type then p type and again n type. I guess N and P should be sufficient to take of majority and minority carrier injection ..
Thats correct .
This is what suggested by "VLSI_Learner " . First check which metal is giving antenna and add jumper of next higher metal as near to gate as possible . Hopefully this should resolve .
Thanks Erikl for the explanation . It is really interesting for me to understand this in more detail .
I tried searching the mentioned book ,but cant find the free ebook version ..
It will be great help if you have that book handy or similar papers and upload it here ... :)
Hi,
can anybody help with the doping concentration of high voltage N-Well with respect to N well .
Any document refering to its effect on device breakdwon will help a lot...
Deepak
Hi Erik,
Can you please help with understanding why WHN is low doped with respect to NW ? Any supporting document will be more than help .
THanks
Deepak.
Three options :
1) Foudry will fill it for you .. You can ignore this error at this stage.
2) Some internal scripts to fill the density . Check with CAD teams.
3) Manual Fill : Dummy metal Pcells ( internal to your organisation ) might be available .
Hope this will help.
:)
1) create new library in library manager
2) attach it to the techfile ( you can get this path from cad team.). It will prompt for this when u ll create new lib.
3) give this lib path while importing you gds.
let me know if any issues.
Deepak
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