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Hi BigBoss,
Previously I've done an experiment in which angle was a variable. the s-parameter data was collected under different angles from(0-360) and frequency was (2.2-7.8) GHz and was presented as a passive load to the PA. basically I combined 360 discrete files to a single (text) file...
Hi everyone!
I've
1 port S-Parameters from 2.2GHz-2.6GHz for various temperatures (25-70C)
1 port S-Parameters from 4.4GHz-5.2 GHz for various temperatures (25-70C)
1 port S-Parameters from 6.6GHz-7.8GHz for various temperatures (25-70C)
I want to create a passive load from these files...
Hi Tomsin Yin,
The same question of your previous post is mine as well. I've generated the layout of power amplifier but don't know how to optimize it. could you please share the procedure!!
Regards/Azeem
Hi BigBoss,
I'm very new to PA world. I'm now testing the board with transistor in place to check its performance. in the gate biase line i'm using a 470 ohm resistor, so when i turn on the gate DC supply i see very small voltage, appearing at gate terminal of my device, 200mV. by using...
Hi There,
I'm going to measure the performance of PA, any suggestions/precautions or any thought by which I may get improved performance. because I've observed that the capacitors and other passive elements are playing a very dramatic role in the performance of PA in simulations, not sure how...
Hi JohnJoe,
yes you were right! that was stability issue and I've fixed it. now the last step. I've generated the layout and going to run cosimulation, but in this case when i do the DC-Annotation i find the current at output terminal is in pA while at this gate voltage it should give nearly...
I would say that Igs is mainly due to the electrons coming from the substrate and breaking the gate-source junction. this is called gate leakage current and it is highly undesirable because it damages the gate terminal of transistor so be happy if you are getting low enough leakage current.
Hi JonJoe and FVM,
thanks for your replies, i've decided to go ahead with poor S22 but certainly the PAE and RF output is great. in fact i'm working on two projects; one of them is microwave heating application using PA, in that the S22 is is going positive i-e +2dB which is very high but PAE...
Hi Guys,
I'm also having such sort of issue unfortunately :( based on the loadpull measurements of 10W Ldmos transistor, I've designed the matching network in ADS. i'm getting the expected performance regarding PAE and RF output power. but in this case S22 is merely -2dB. I'm not sure how this...
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