Hi everyone,
I've tryed to simulate some Infineon Mosfets by using differents models they provide on the website.
I'm interesed into RDS(on) value and into self-heating behaviour. During simulation I cannot reach the Rds(on) as declared on the datasheet. However by trying different Mosfets from other manufacturer I can measure the declared Rds(on) with the same test circuit.
This is the circuit setup by using LTspice and IPB015N08N5 NMOS:
View attachment 150640
As you can see the Vgs is a pulse of 10V, the drain current is 100A (dissipative Isource, or load), and the case temperature is forced to be 25°C. The datasheet report a typical RDS(on) of 1.1 mohm but the simulation give me an RDS(on) of 2.15mohm (calculated as Vds/I1) when MOS is on.
View attachment 150642
Why? Any idea?