Nov 4, 2016 #1 roshan12 Junior Member level 2 Joined Dec 20, 2013 Messages 21 Helped 0 Reputation 0 Reaction score 0 Trophy points 1 Activity points 203 In the fabrication of Carbon Nanotube FETs, the nanotubes are placed on the Si substrate over a layer of SiO2. Is this done to increase the band gap of the material or just to improve the adherence to the substrate?? Attachments Capture.JPG 28.7 KB · Views: 76
In the fabrication of Carbon Nanotube FETs, the nanotubes are placed on the Si substrate over a layer of SiO2. Is this done to increase the band gap of the material or just to improve the adherence to the substrate??