Thanks for the immediate reply.
Then one more doubt : If diode cut-in voltage is a function of doping concentration, why are almost all silicon diodes having forward drop around 0.7V and germanium around (0.3V) almost irrespective of part number. Usually power diodes will have high doping concentration, right ? for them also the drop is 0.7V!!! why ?
I am having the idea that all Si diodes have 0.7V and Ge diodes have 0.3V drop and the forward voltage drop mostly depends only on the type of semiconductor material (Si or Ge).
Please clarify this also...
- SUjO