For nonsilicide technologies resistance of via will be much less than contact (for the comparable sizes). Resistance of contact depends not only on the geometrical sizes, but also from doping degree of material to which contact is done.
For technologies with silicide the difference of resistance will be determined as a rule by a ratio of the geometrical sizes, therefore resistance of contact will be higher in 1.5 - 2 times than via for usual metal layers and in 4 - 6 times for thick metal layers.