the rf mos is deep nwell process and has six terminals. where the termiinal "DN" and "SUB" connect to ?
when i connect "DN" to VDD, and "SUB" to the GND , some errors like "plus: can't handle (nil nil)" appear in the schematic editor.
how to deal with this problem?
The figure above shows the deep n-well structure. In order to isolate we need
to have reversed biased junctions across substrate and deep n-well. Hence
substrate should be connected to most negative voltage and n-well to the
most positive voltage in the system.
thx for ur reply, Raduga.
yes, i connected the substrate to the gnd (the most negative voltage in the circuit) and n-well to the most positive voltage. but there were error tips when i complete the simulation.