Re: Xspice
Hspice is better than Xspice .
HSPICE® is an integral component of Synopsys’ comprehensive mixed-signal verification solution, Discovery AMS. HSPICE offers
a high-accuracy circuit simulation environment that combines the most accurate and validated integrated circuit (IC) device models
with advanced simulation and analysis algorithms. As IC geometries continue to shrink, the need for an accurate circuit simulator is
critical. Designers require a highly accurate circuit simulator to precisely predict the timing, power consumption, and functionality
of their designs. HSPICE provides the industry’s most trusted and comprehensive circuit simulator engine and device models.
HSPICE’s simulator engine has been successfully used to design over one-million integrated circuits. Its advanced circuit simulation
algorithms provide HSPICE with convergence characteristics that are superior to other tools.
Benefits
■ Provides golden accuracy for circuit
simulation
■ Supports the most accurate and
extensive set of industry-standard and
proprietary simulation models
■ Supports scattering-parameter
(S-parameter) modeling during
transient simulations
■ Eases adoption through extensive
foundry support and comprehensive
support for industry-standard formats
■ Supports comprehensive interconnect
and signal-integrity analysis solutions
■ Supports extensive cell-characterization
capabilities
■ Supports extensive optimization and
corner-case analysis capabilities
Accurate device modeling
An integral component of circuit simulation
accuracy is device modeling. HSPICE’s
international team of device-modeling
scientists ensures that it has the most
up-to-date and accurate set of industry
standard model implementations. The
comprehensive set of HSPICE models have
been extensively proven in CMOS, bipolar,
BiCMOS, Silicon Germanium (SiGe), SOI,
Gallium Arsenide (GaAs), and Indium
Phosphide (InP) technologies.
In addition
to all basic SPICE models, a partial list of
advanced models for HSPICE includes:
■ MOSFETs: All revisions of BSIM3,
BSIM4, Philips MOS9/11, EKV, and
HiSIM.
■ Bipolar transistors: All revisions of
VBIC-95/99, MEXTRAM, HiCUM,
MODELLA, and UCSD-HBT.
■ Field effect transistors: Materka,
Curtice, Statz, and TriQuint TOM1/2/3.
■ Silicon on Insulator (SOI): BSIM SOI 3.1
PD/FD/DD, UF-SOI, and SOSFET.
■ Thin film transistors: All revisions of RPITFT
and HP amorphous-Si.
■ Special devices: Junction varactors,
silicon MOS interface, IC resistors,
and capacitors.