Hello, I'm having trouble finding the value of the right concentrators that are on the gate of the gate (SiO2 as gate dielectric and P-type substrate [NA=?])
Could someone indicate a material to show a usual value?
Psub NA will vary with working voltage, to some extent.
3E17 - 5E17 range appears normal for 3.3V CMOS. If
you can find a manufacturer's SPICE model look for
"NCH" or "NSUB" params which may disclose process
detail.