GaN ICs sound interesting. I read the article you linked, and it seems like it will be more reliable. But just because its structural and material properties are more resilient than normal silicon ICs, I don't think this would mean they would work better in radiation environment.
When we create ICs for radiaition environments, we instead use redundancy techniques and use larger ICs.
Known to support much higher frequencies from lower dielectric constant and junction capacitance are also more expensive and use extremely lethal hot gases to produce.