Re: MOSFET
It is there in the explanation of the model :
In weak inversion: Id=Im * exp( (Vgs-Vm)/n*φt)*[(1-exp(-Vds/φt), where Im=(W/L)*I'm
φt=(k*T)/q
In saturation: Id=(k/2)*(Vgs-Vt)²
Vt=Vto+γ(√Vsb+φo -√φo)
so doing the math we find out that the dependance from the factor of the temperature is a bit complecated.
According to Tsividis analysis, the dependance on the temperature in strong inversionhas as follows: a temp increase tends to increase the drain current for low currents and vise versa for high current. The effective mobility is decreasing with temperature but always depends on the current : high or low.
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