Re: CMOS power amplifier
there are two main issues in the design of power amplifiers in submicron CMOS,oxide breakdown and hot carrier effect.Both of this get worse as the technology scales.The oxide breakdown is a catastrophic effect and sets a limit on the maximum signal swing on drain .the hot carrier effect, is a reliability issue.It increases the threshod voltage and consequently degraeds the performance of the device.
<A 2.4-GHz 0.18-m CMOS Self-Biased Cascode Power Amplifier>
Tirdad Sowlati, Member, IEEE, and Domine M. W. Leenaerts, Senior Member, IEEE