Weak inversion region design

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ehsan_r34

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Hi,

I want to design an OTA in subthreshod region. But i don,t know how must start my design. OTA have 1v Vdd. gain=52db and I(vdd)<100nA
Please help me as soon as possible.
Thanks
 

i think u need to use gm/id methodology
see the attached file
 

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Yes, you need to let transistors operate under sub-threshold region. Its I/V equation is different from that of satuation region.
MOS transistor in sub-threshold region behaves similar as bipolar.
 

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