Vt of an Nmos with Temperature Sweep

[Ghaznavi]

Hi all,
I want to measure the Vt against temperature sweep graph,

1) What I dont know is how to include the V(threshold) of a an NMOS in the design as an output so that I can sweep over temperature then,.

2) Secondly, I know that Vt decreases as the temperature increase and so I expected the Id VS Vds curves should rise higher (for e.g. Id(100°C) > Id(25°C) in the saturation region) but What I observe if opposite,

Can any Please let me know the answer to 2 questions,

thank you,

 

[dick_freebird]

1) You might just connect a FET as a MOS diode and bias
it with 1uA/square and pick off the voltage, if you can't
find a .probe syntax that gives you the operating point
value. The model parameter value won't change.

2) mobility drops meanwhile, so you have a foot-race sort
of situation. Extrinsic resistances also rise. That's why we
use simulation-in-detail instead of pencil and paper and a
boatload of "simplifying assumptions".