Parameter | Symbol | Rated Value | Units | Measured in |
Power | Ptot | -- | 0.225 | W |
Collector Current | Icm | -- | 50 | mA |
Maximum Junction temp | Tjm | -- | +175 | ℃ |
Storage Temperature | Tstg | -65 | +175 | ℃ |
Collector- Emitter breakdown voltage | V(BR)CEO | IC=3mA | 15 | V |
Collector-Base breakdown voltage | V(BR)CBO | IC=100μA | 20 | V |
Emitter-Base Breakdown Voltage | V(BR)EBO | IE=100 μA | 3 | V |
Forward Current Transfer Ratio | hFE | VCE=6V IC=1mA | 30 | |
Collector-Base Cuttoff Current | ICBO | VCB=15V | ----- 20 | nA |
Collector-Emitter Saturation Voltage | VCE (sat) | IC=5mA IB=0.5mA | ----- 100 | mV |
Characteristic Frequency | fT | VCE=10V IC=4mA | 5000 | Mhz |
This one seems adequate.thank you so much for the information its not a problem it does not specifically have to be a PNP type it just has to comply to the parameters required if you could give me an option that would be able to withstand that heat range that would be very much appreciated
There isn't such "P-Type chip". It can be either PNP or NPN type Bipolar Transistor or N-Type or P-Type MOS.we have contacted with the customer they are requiring that the chip be a P type chip as they want to use the chips on a wide range of their devices across different devices hence why they want to keep the chips P type uniform across a wide range they also mentioned that it is to be used as a triode in light of this could you recommend a P type chip that would be able to work close to these Junction temperatures or maybe a work around could be a chip with a specific type of heat coating or cooling that would not allow it to get to those temperatures so it would not be able to compromise the chip life?
I have tested a few parts out to 300C which worked fine.-Max. Junction Temp.=+175°
This is only available with GaN or similar High Reliability Compound Semiconductors. Silicon based components cannot resist to this temperature grade.
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