The emitter-base junction of a transistor has a reverse-biased avalanche breakdown at 5V to 7V and is not robust to handle the breakdown current so the transistor will be damaged. Then maybe the base-emitter should be shorted to make a diode.
I have heard that the noise produced by an emitter-base having avalanche breakdown is caused by its fragile junction having small holes burned in it. Then the hFE of the transistor is reduced depending on the breakdown current and its duration. I was told to never use a transistor that has had its emitter-base junction have avalanche breakdown. I never tried one as a noise source but I wonder if the noise level slowly decreases as the junction is slowly destroyed? A zener diode also makes avalanche breakdown noise but it is built to survive the punishment.
The emitter-base junction of a transistor has a reverse-biased avalanche breakdown at 5V to 7V and is not robust to handle the breakdown current so the transistor will be damaged. Then maybe the base-emitter should be shorted to make a diode.
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