Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
I know it's maybe a stupid question but i can't find a proper testbench to know the diode recovery time.
I used a pulse signal with -2V-2V, and with the current , i didn't see any strike....
by the way, is there any recover time for mos diode?????
A majority carrier diode (MOS, Schottky) should have no
recovery "porch", just the depletion capacitances to
discharge. A bipolar diode (PN or BJT junction) will in
reality; model quality is always a question and small
signal transistors may simply assume no saturation
and have no proper modeling depending on plans and
I would recommend using a series resistor and vpulse,
the forward (V-Vf)/R sets your forward current which
is a primary "knob" on charge stored (QRR). The reverse
time will also be modulated by the impedance and a
stiff voltage source would only be limited by diode
Rs, which might make the timescale unreasonably
short and more to the point, application-unrealistic.
thanks for your recommendation! But when i used mos diode as normal PN diode in a buck converter, I also saw a current which looks like a "reverse recovery current" though my mos diode like picture shows below. So i wonder if this happens because the depletion capacitances need to discharge. View attachment 84123