navbp
Junior Member level 1
The resistance of a conductor at temperature T can be calculated by
R(T) = R(To)*{1 + alpha*(T-To)}
Where R(T), R(To) = Resistance at temperature T, To
alpha = Temperature coefficient of conductor
T, To = Temperatures
But in an Infineon application note "MOSFET Power Losses Calculation Using the Data-Sheet Parameters", the relationship of RDSon of MOSFET at temperature Tj is given by
RDSon(Tj) = RDSon(25C)*{1+(alpha/100)}(Tj-25C)
Could somebody please explain why there is a difference?
What is the unit of alpha in the second formula?
Thank you in advance!
Regards.
R(T) = R(To)*{1 + alpha*(T-To)}
Where R(T), R(To) = Resistance at temperature T, To
alpha = Temperature coefficient of conductor
T, To = Temperatures
But in an Infineon application note "MOSFET Power Losses Calculation Using the Data-Sheet Parameters", the relationship of RDSon of MOSFET at temperature Tj is given by
RDSon(Tj) = RDSon(25C)*{1+(alpha/100)}(Tj-25C)
Could somebody please explain why there is a difference?
What is the unit of alpha in the second formula?
Thank you in advance!
Regards.