TCAD photodiode (iv characteristics by using atlas) SILVACO TCAD

go atlas
mesh space.mult=1
x.mesh loc=0.00 spac=0.5
x.mesh loc=3.00 spac=0.1
x.mesh loc=5.00 spac=0.1
x.mesh loc=15.0 spac=0.1
x.mesh loc=17.00 spac=0.1
x.mesh loc=20.00 spac=0.5
#
y.mesh loc=20.00 spac=0.4
y.mesh loc=15.00 spac=0.1
y.mesh loc=10.00 spac=0.1
y.mesh loc=0.00 spac=0.4

region num=1 silicon

electr name=anode x.min=8.5 length=3
electr name=cathode1 x.min=0.5 length=2
electr name=cathode2 x.min=17.5 length=2

#.... N-epi doping 
doping n.type conc=1e19 x.min=0 x.max=20 y.top=0 y.bottom=20 uniform


#.... N+ doping 
doping n.type conc=1e18 x.min=3 x.max=17 y.top=0 y.bottom=15 uniform

#.... P-epi doping 
doping p.type conc=1e17 x.min=5 x.max=15 y.top=0 y.bottom=10 uniform

material material=silicon EG300=1.12 MUN=1100
material region=1 TAUN0=2e-7 TAUP0=1e-5
material name=base NC300=3e19

models bbt.kl trap.tunnel

method newton

struct outfile=simplegediode.str
tonyplot simplegediode.str

solve init
log outfile=simplegediode-iv.log
solve vanode=-3 vfinal=3 vstep=0.5 name=anode
tonyplot simplegediode-iv.log
quit