jgk2004
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Hello,
I am wondering if anyone has any industry experience in this topic. The switch cap feedback in a sigma delta ADC (We can also consider a SAR ADC) samples a Vrefp and Vrefn. Lets just do a single bit feedback example. If I make this Vrefp = VDD and Vrefn=VSS this means I maximize my signal to noise ratio since this allows for larger input signal into the ADC. Now if I look at the peak currents pulled from this switch cap and compare them to an high speed LDO which would be needed to deliver these currents, the supply on the LDO has about the same peak currents. Thus doesn't it defeat the purpose of using an LDO? How many people just connect up their references right up to VDD/VSS? Do you always use LDOs? One other issue with an on chip LDO would be I also have to pick Vrefp/Vrefn smaller then VDD/VSS, maybe VDD-200mV and VSS+200mV to keep pass LDO transistors in saturation.... which is bad for signal to noise ratios...
NOTE: when I say connect up to VDD/VSS I still assume separate bumps/bondpads for some isolation. But then off chip it would have its own big LDO with large decap.
I am looking for vote and reasons if possible... can't really find anything on the web
Thanks for all feedback
JGK
I am wondering if anyone has any industry experience in this topic. The switch cap feedback in a sigma delta ADC (We can also consider a SAR ADC) samples a Vrefp and Vrefn. Lets just do a single bit feedback example. If I make this Vrefp = VDD and Vrefn=VSS this means I maximize my signal to noise ratio since this allows for larger input signal into the ADC. Now if I look at the peak currents pulled from this switch cap and compare them to an high speed LDO which would be needed to deliver these currents, the supply on the LDO has about the same peak currents. Thus doesn't it defeat the purpose of using an LDO? How many people just connect up their references right up to VDD/VSS? Do you always use LDOs? One other issue with an on chip LDO would be I also have to pick Vrefp/Vrefn smaller then VDD/VSS, maybe VDD-200mV and VSS+200mV to keep pass LDO transistors in saturation.... which is bad for signal to noise ratios...
NOTE: when I say connect up to VDD/VSS I still assume separate bumps/bondpads for some isolation. But then off chip it would have its own big LDO with large decap.
I am looking for vote and reasons if possible... can't really find anything on the web
Thanks for all feedback
JGK