I am trying to simulate the operation of cmos inverter in subthreshold region.
threshold voltage of my device is aroung 150mv .
Please suggest the parameters I should use to simulate like
vdd and output capacitance I should use..
the subthreshold current of my device is of order of nA
I defined the two mosfets nmos and pmos along with vdd and capacitor at the output with common input like a cmos inverter.. For simulating subthreshold region opration do i need to add something elso too? plzz tell any specific detail if required for simulating such circuit