When the MOSFET operates in subthreshold conduction, what is the effect f Vgs on the slope of the Ids-Vgs curve, and which has larger slope (nmos or pmos)?
Hi, Vgs doesn't have too much impact on the slope (gm or transconductance) in sub-threshold (weak inversion). Check this pdf (from page 9): https://www.cppsim.com/CircuitLectures/Lecture16.pdf
NMOS with same dimensions has bigger slope than PMOS on the same technology usually.