I was about to give up on this as many of my design used to fail coming at last stage. So, thanks a so much, John. Thank you for your precious time.
You have to because the DC current path is extracted from higher frequency. In your case above, the DC characteristic of your structure is calculated from the characteristic at 500 MHz, and this is for sure not correct.(1) Do you suggest whenever I use active device, I should do momentum from 0 Hz?
You placed some of your ports in structure B inside the structure:(2) Why do I get warning about port not being on edge of conductive/nonconductive layer (please see 4th message above)? Can I ignore this warning?
It depends on your application, will you place components or is this your RF feed. I think all options are well explained in 5992-0415EN, and thanks for the link!(3) I read couple of documents on area/edge pin types, especially:https://literature.cdn.keysight.com/litweb/pdf/5992-0415EN.pdf, and I guess wrong usage may cause small error compared to measured result. Should I use edge/area pin or the default one as I have been doing so far?
How much experience you have? In my personal opinion, there will be always a mismatch between simulation and measurement.(4) Is there anything else I need to care about or I am good to go for prototype fabrication if I consider my results satisfactory?
It depends on your application, will you place components or is this your RF feed. I think all options are well explained in 5992-0415EN, and thanks for the link!
How much experience you have? In my personal opinion, there will be always a mismatch between simulation and measurement.
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