Simulation of a tunneling FET

[electronics20]

Dear all
I developed this following code for simulating a TFET which is described as an attached image in ATLAS. However, I do not attain desired result for Id versus VG. Plz help me. Thanks in advance

# To open ATLAS in DECKBUILD
go atlas

set sMp=0.05
# location of the start of the front (gate) oxide layer thickness
set sToxf=-0.002
# minimum x location of gate electrode
set gmin=0.05
set gmax=0.135
mesh space.mult=1.0
# mesh definition in x direction
x.mesh loc=0.00 spac=0.0.004
x.mesh loc=0.048 spac=0.0.002
x.mesh loc=0.05 spac=0.001
x.mesh loc=0.055 spac=0.001
x.mesh loc=0.09 spac=0.004
x.mesh loc=0.135 spac=0.001
x.mesh loc=0.137 spac=0.001
x.mesh loc=0.185 spac=0.007

# mesh definition in y direction
y.mesh loc=$sToxf spac=0.001
y.mesh loc=0.00 spac=0.001
y.mesh loc=$sMp spac=0.005


# region definition
region number=1 x.min=0 x.max=0.185 y.min=$sToxf y.max=0 material=oxide
region number=2 x.min=0 x.max=0.185 y.min=0 y.max=$sMp material=silicon
region   number=3 x.min=$gmin x.max=$gmax y.max=-0.002 y.min=-0.01 material=Poly
# electrode definition
electrode name=gate       number=1 x.min=$gmin x.max=$gmax y.min=$sToxf y.max=$sToxf
electrode name=source     number=2 x.min=0     x.max=0.01   y.min=0 y.max=0
electrode name=drain      number=3 x.min=0.175 x.max=0.185 y.min=0 y.max=0

doping     uniform    conc=1e20      p.type      x.left=0             x.right=$gmin                y.min=0        y.max=sMp
doping     uniform    conc=2e19      n.type      x.left=$gmin         x.right=0.055                y.min=0        y.max=sMp
doping     uniform    conc=1e17      n.type      x.left=0.055         x.right=$gmax                y.min=0        y.max=sMp
doping     uniform    conc=1e19      n.type      x.left=$gmax         x.right=0.185                y.min=0        y.max=sMp

#qtregion number=1 pts.normal=10 pts.tunnel=300 x1=0.048 y1=0 x2=0.048 y2=0.05 x3=0.137 y3=0.05 x4=0.137 y4=0

qtx.mesh loc=0.048 spac=0.001
qtx.mesh loc=0.052 spac=0.001
qty.mesh loc=-0.002 spac=0.001
qty.mesh loc=0 spac=0.001
contact     name=gate workfunction=4.17
# p-type doping with a uniform concentration throughout all of the silicon doping uniform conc=2e17 p.type direction=y regions=2
# Gaussain doping profile in the source



#doping gaussian characteristic =.05 conc=1e20 p.type x.left=0 x.right=$gmin y.top=0 lat.char=0.05 direction=y
#doping gaussian characteristic =.05 conc=1e20 n.type x.left=$gmax x.right=3 y.top=0 lat.char =.05 direction=y
#doping gaussian characteristic =.05 conc=1e17 n.type x.left=$gmax x.right=0.185 y.top=0 lat.char =.05 direction=y
#doping gaussian characteristic =.05 conc=1e19 n.type x.left=$gmax x.right=0.185 y.top=0 lat.char =.05 direction=y

models srh fermi print temperature=300  bbt.forward bbt.nonlocal bbt.nlderivs bgn

method newton 
output con.band val.band eigen=7

solve init
solve vdrain=0.8
solve vdrain=0.9
solve vdrain=1.05

log outf=idvds01.log

solve vgate=0.0 vstep=0.1 vfinal=1.6 name=gate



save outf=n1tfet.str
tonyplot idvds01.log
tonyplot n1tfet.str

quit