kb82kb
Newbie level 1
I am trying to simulate a simple P-I-N Avalanche PhotoDiode structure with a narrow bandgap material. I have defined the SELB model parameters and I can plot/see the "impact generation rate" in the device structure after simulation. The impact generation rate changes if I change the impact ionization coefficient parameters. But surprisingly, the I-V curve remains the same. Anyone has any idea, what might be wrong?
I can post the code too in case someone is interested.
I can post the code too in case someone is interested.