isaacnewton
Full Member level 2
- Joined
- May 13, 2004
- Messages
- 143
- Helped
- 12
- Reputation
- 24
- Reaction score
- 8
- Trophy points
- 1,298
- Location
- Earth Village
- Activity points
- 1,134
vds(sat)
On page 297 of Baker's book CMOS: Circuit Design, Layout, and Simulation 2nd Edition www.cmosedu.com/cmos1/book.htm
Equation 9.54
Vov = VGS - VTH ≠ VDS,sat
How to understand this? How do define VDS,sat for short-channel MOSFETs?
The short channel effects is only for very small L transistors, right? If I choose L = 2 um for 0.18 um technology , does the short-channel effect exist?
For short channel mosfet, the drain current is
Equation 9.56
iD = vsat • Cox' • W • (VGS - VTH - VDS,sat)
On page 297 of Baker's book CMOS: Circuit Design, Layout, and Simulation 2nd Edition www.cmosedu.com/cmos1/book.htm
Equation 9.54
Vov = VGS - VTH ≠ VDS,sat
How to understand this? How do define VDS,sat for short-channel MOSFETs?
The short channel effects is only for very small L transistors, right? If I choose L = 2 um for 0.18 um technology , does the short-channel effect exist?
For short channel mosfet, the drain current is
Equation 9.56
iD = vsat • Cox' • W • (VGS - VTH - VDS,sat)