I know that increasing the Gm of the transistor, decreases the rise/fall time i.e increases the switching speed. However, I don't know exactly why? and what's the mathematical expression?
Switching time t ~ RC , where R = output impedance (of a driver), C = load capacitance.
Consider the transconductance Gm as inverse resistance R, hence t ~ C/Gm .
Thnx
Yeah, I see... But this means we assume charging and discharging during switching occurs in the triode (linear) region. This not so accurate, right??