can any body tell me how can i calculate the concentration of donar or acceptor atoms if the difference between fermi level of intrinsic semi conductor and doped semiconductor is given..
for a more complete answer, check out the book:
solid state electronic devices by streetman
I think it may even be floating around on edaboard (i dunno, haven't checked).
The book will give you a more complete answer with conceptual understanding (rather than just a formula).
we can definitely calculate concentration of donor or acceptor atoms because the addition of donor/acceptor atoms causes shifting of fermi level in the semiconductor. Greater the addition of impurities more will be the shifting of Fermi level. Hence they are related parameters.