Problem of lateral diffusion on SILVACO TCAD

[yogesh5683]

Hi everyone,
I am new on silvoco TCAD,i am designing a device on it of 32nm fgmos but the problem here is "lateral diffusion" and the junction is not finding properly,
the command i used for it is
implant arsenic dose=1e15 energy=10
pleaase suggest me proper command that i can use to implant n type material by reducing lateral diffusion for 32nm fgmos.

the output seeems like this

 

[Colbhaidh]

You are not showing the dopants in the attached picture, just the structure.
Post your code.

 

[yogesh5683]

go athena

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Code PHP - [expand]
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#TITLE: EEPROM cell formation example
#
 
line x loc=0.0  spac=0.005 
line x loc=0.032  spac=0.00125
line x loc=0.045  spac=0.0025
line x loc=0.075  spac=0.01
#
line y loc=0.00 spac=0.0005
line y loc=0.015  spac=0.0015
line y loc=0.1  spac=0.0125
 
#
init c.boron=3e16 orientation=100 space.mult=1
 
#
method compress fermi
diffuse time=1 temp=950 dryo2 
#
etch oxide thick=0.001
extract name="tunnelox" thickness oxide mat.occno=1 x.val=0
#
implant boron dose=1e12 energy=25 
#
deposit poly thick=.0125 div=4
#
implant phos dose=6e14 energy=30 
#
diffuse time=0.5 temp=950 dryo2 
etch oxide thick=0.002
extract name="oxy" thickness oxide mat.occno=1 x.val=0
#
deposit nitride thick=0.001 div=1
#
deposit oxide thick=0.0005 div=1
#
deposit poly thick=.0125 div=4 c.phos=8e19
# 
etch poly    right p1.x=0.03
# 
etch oxide   right p1.x=0.03
# 
etch nitride right p1.x=0.03
#
etch oxide   right p1.x=0.03
#
etch poly    right p1.x=0.03
#
etch oxide   right p1.x=0.03
#
relax y.min=.015 dir.y=f
#
implant arsenic dose=1e15 energy=10 
#
diff time=50 temp=950
deposit oxide thick=.0015 div=2
 
 
 
#
structure mirror left
#
etch oxide left  p1.x=-0.04
etch oxide right p1.x=0.04
 
deposit alum thick=0.0025 div=1
#
etch alum start x=0.045 y=-10.
etch alum cont x=0.045 y=10.
etch alum cont x=-0.045 y=10.
etch alum done x=-0.045 y=-10.
#
# define electrode names
electrode name=fgate x=0 y=-0.005
electrode name=cgate x=0 y=-0.02
electrode name=source x=-0.075
electrode name=drain x=0.075 
electrode name=substrate backside
# save the structure
#structure outfile=eprmex01_0.str
#
#tonyplot  eprmex01_0.str -set eprmex01_0.set
 
# Switch to Devedit for remeshing...
go devedit
 
 
# Set Meshing Parameters
#
base.mesh height=0.02 width=0.02
#
# Make sure impurity gradiants have enough detail. (i.e. no triangle
# spans more than 1 (sensitivity=1) power of 10)
imp.refine imp="NetDoping" sensitivity=1
imp.refine min.spacing=0.001
#
# Make sure channel has enough triangles.
constr.mesh depth=0.0125 under.material="PolySilicon" max.height=0.0025 \
        max.width=0.0025
constr.mesh depth=0.0025 under.material="PolySilicon" max.height=0.00075
#
# Make sure contacts have enough connection points.
constr.mesh depth=0.0025 under.material="Aluminum" max.width=0.05
 
# Create a mesh, using the parameters set above.
mesh mode=meshbuild
 
# save structure
struct outfile=eprmex01_1.str
tonyplot  eprmex01_1.str -set eprmex01_1.set

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quit