The simulation also can tell you, which kind of losses are dominant. I see no sense in guessing about possible measures without this information. Plotting either loss power (uds•id) or loss energy (∫uds•id) for one switch cycle would be instructive.
The simulation also can tell you, which kind of losses are dominant. I see no sense in guessing about possible measures without this information. Plotting either loss power (uds•id) or loss energy (∫uds•id) for one switch cycle would be instructive.
Yes, I have done like that. i get the power every main component consumes. but the power consumed by inductor ,diode model can not reduce. so i think i can breach at this point.(POWER MOSFET )
The important difference is, that switching losses may be (partially) influenced by modifying the driver signal. But high MOSFET losses may also indicate an unsuitable transistor.