bryanurbe
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Hello To All,
Hope this message finds everyone well. I have the following question:
The Qg Vs. Vgs characteristic provided for many power MOSFETs is often limited to a peak Vgs of 10V and it is given for some assumed test conditions (i.e. Vds = 300, Id = 55A, & Ig = 10mA - please see attached datasheet for IXFN110N60P3). That being said, my questions are:
1) How should I determine my desired gate charge if I want to operate the devise at a different set of values than those assumed by the manufacturer in generating the Qg Vs. Vgs characteristic curve.
2) If I want to apply a Vgs of 15V (i.e. to achieve minimum Rds on), is it acceptable to obtain the required gate charge by extrapolating the given Qg Vs. Vgs characteristic?
Thanks in advance for any assistance you may be able to provide.
Regards,
Bryan
Hope this message finds everyone well. I have the following question:
The Qg Vs. Vgs characteristic provided for many power MOSFETs is often limited to a peak Vgs of 10V and it is given for some assumed test conditions (i.e. Vds = 300, Id = 55A, & Ig = 10mA - please see attached datasheet for IXFN110N60P3). That being said, my questions are:
1) How should I determine my desired gate charge if I want to operate the devise at a different set of values than those assumed by the manufacturer in generating the Qg Vs. Vgs characteristic curve.
2) If I want to apply a Vgs of 15V (i.e. to achieve minimum Rds on), is it acceptable to obtain the required gate charge by extrapolating the given Qg Vs. Vgs characteristic?
Thanks in advance for any assistance you may be able to provide.
Regards,
Bryan